参数资料
型号: 2SK1197
元件分类: JFETs
英文描述: POWER, FET
封装: TO-126MOD, 3 PIN
文件页数: 3/5页
文件大小: 18K
代理商: 2SK1197
2SK1197
0
50
100
150
Case Temperature
TC (°C)
30
20
10
Channel
Dissipation
Pch
(W)
Power vs. Temperature Derating
1,000
100
Drain to Source Voltage VDS (V)
10
Drain
Current
I
D
(A)
0.1
Maximum Safe Operation Area
0.2
0.5
1.0
DC
Operation
(T
C
=
25
°C)
10
20
Drain to Source Voltage VDS (V)
0
0.5
0.4
0.1
0.2
0.3
Drain
Current
I
D
(A)
Typical Output Characteristics
VGS = 2 V
4 V
3 V
3.5 V
4.5 V
2.5 V
Pulse Test
0.5
25
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
0.4
0.1
13
4
0
0.2
0.3
VDS = 10 V Ta = –25°C
25
°C
75
°C
1,000
1.0
Drain Current ID (A)
0.1
0.01
100
Forward Transfer Admittance
vs. Drain Current
10
Forward
Transfer
Admittance
yfs
(mS)
VDS = 10 V
f = 1 kHz
Ta = –25
°C
25
°C
75
°C
1.0
Drain Current ID (A)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
0.01
0.1
Drain to Source Saturation Voltage
vs. Drain Current
10
1.0
100
VGS = 9 V
Ta = 75
°C
25
°C
–25
°C
相关PDF资料
PDF描述
2SK1402A-E 4 A, 650 V, 2.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK1402-E 4 A, 600 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK1450 20 A, 450 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PB
2SK1526-E 40 A, 450 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK1627 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
相关代理商/技术参数
参数描述
2SK1199 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:SILICON N CHANNEL MOS FET
2SK12 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 5MA I(DSS) | TO-17
2SK1200 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 3A I(D) | TO-247VAR
2SK1201 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 4A I(D) | TO-247VAR
2SK1202 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 5A I(D) | TO-247VAR