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参数资料
| 型号： | 2SJ557 |
| 厂商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P沟道MOS场效应晶体管开关 |
| 文件页数： | 1/8页 |
| 文件大小： | 62K |
| 代理商： | 2SJ557 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998, 1999
MOS FIELD EFFECT TRANSISTOR
2SJ557
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.
D13292EJ1V0DS00 (1st edition)
Date Published
June 1999 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SJ557 is a switching device which can be driven directly
by a 4 V power source.
The 2SJ557 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
Can be driven by a 4 V power source
Low on-state resistance
RDS(on)1 = 155 m
MAX. (VGS = –10 V, ID = –1.0 A)
RDS(on)2 = 255 m
MAX. (VGS = –4.5 V, ID = –1.0 A)
RDS(on)3 = 290 m
MAX. (VGS = –4.0 V, ID = –1.0 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ557
3-pin Mini Mold (Thin Type)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
–30
V
Gate to Source Voltage
VGSS
–20 / +5
V
Drain Current (DC)
ID(DC)
±2.5
A
Drain Current (pulse)
Note1
ID(pulse)
±10
A
Total Power Dissipation
PT1
0.2
W
Total Power Dissipation
Note2
PT2
1.25
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1 %
2. Mounted on FR4 Board, t
≤ 5 sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
–0.06
2.8
±0.2
1.5
0.95
1
2
3
1.9
2.9 ±0.2
0.4
+0.1
–0.05
0.95
0.65
+0.1 –0.15
1 : Gate
2 : Source
3 : Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Marking: XB
Gate
Drain
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相关代理商/技术参数 |
参数描述 |
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| 2SJ557-T1B-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 30V 2.5A 3-Pin SC-96 T/R 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 30V 2.5A 3-Pin SC-96 T/R Cut Tape |
| 2SJ559 | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 2SJ56 | 制造商:TT Electronics / Semelab 功能描述:MOSFET P-Ch 200V 8A High Speed TO-3 |
| 2SJ560 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ561 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
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