参数资料
型号: 2SJ557
厂商: NEC Corp.
英文描述: P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
中文描述: P沟道MOS场效应晶体管开关
文件页数: 5/8页
文件大小: 62K
代理商: 2SJ557
Data Sheet D13292EJ1V0DS00
5
2SJ557
0.01
0.1
1
10
0.4
0.6
0.8
1.0
1.2
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
IF
-
Source
to
Drain
Current
-
A
VF(S-D) - Source to Drain Voltage - V
Qg - Gate Charge - nC
0
13
5
4
2
DYNAMIC INPUT CHARACTERISTICS
V
GS
-Gate
to
Source
Voltage
-
V
0
4
2
6
8
10
VDD =
10 V
6 V
ID =
2.5 A
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - S
rth(ch-A)
-
Transient
Thermal
Resistance
-
C/
W
10
1
100
1000
1
0.001
0.01
0.1
10
100
1000
Single Pulse
Without Board
Mounted on 250 mm x 35 m
Copper Pad
Connected to Drain Electrode
in 50 mm x 50 mm x 1.6 mm
FR-4 Board
2
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