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参数资料
| 型号： | 2SJ574 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MPAK-3 |
| 文件页数： | 11/12页 |
| 文件大小： | 76K |
| 代理商： | 2SJ574 |
2SJ574
4
-1.0
-0.8
-0.6
-0.4
-0.2
0
-2
-4
-6
-8
-10
5
4
3
2
1
–40
0
40
80
120
160
0
-150mA
-50m A
Pulse Test
V
= -4V
GS
-50m A, -150m A
I
= -300mA
-50m A, -150m A, -300m A
I
= -300m A
D
-10V
D
Gate to Source Voltage
V
(V)
GS
Drain to SOurce Saturation Voltage
vs. Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
-0.1
-0.5
-0.2
50
10
1.0
-1.0
V
= -10 V
GS
-4 V
Pulse Test
0.05
2
5
20
Drain Current
I
(A)
D
Static Drain to Source on State
Resistance vs. Drain Current
Case Temperature
Tc
( °C)
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
|yfs|
(S)
Forward
Transfer
Adimittance
5
1.0
0.1
0.05
0.2
0.5
2
-0.1
-0.5
-.0.2
-1.0
Drain Current
I
(A)
D
Tc = –25 °C
75 °C
V
= -10 V
Pulse Test
DS
25 °C
Static
Drain
to
Source
on
State
Resistance
()
DS(on)
R
Static
Drain
to
Source
on
State
Resistance
()
DS(on)
R
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PDF描述 |
|---|---|
| 2SJ646 | 8000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ646-TL | 8000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ646 | 8000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ646-TL | 8000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK1066 | 20 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ574_11 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET High Speed Switching |
| 2SJ575 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Switching |
| 2SJ576 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET High Speed Switching |
| 2SJ577 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ578 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
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