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参数资料
| 型号： | 2SJ574 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MPAK-3 |
| 文件页数： | 12/12页 |
| 文件大小： | 76K |
| 代理商： | 2SJ574 |
2SJ574
5
-0.5
-0.4
-0.3
-0.2
-0.1
0
-0.4
-0.8
-1.2
-1.6
-2.0
V
= 0,5V
GS
Pulse Test
-10 V
Switching Characteristics
Source to Drain Voltage
V
(V)
SD
Reverse
Drain
Current
I
(A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
-5 V
Typical Capacitance vs.
Drain to Source Voltage
1
-0.1
Drain Current
I
(A)
D
Swicthing
Time
t
(ns)
-0.2
-0.5
-1.0
2
5
10
20
50
100
200
500
1000
Capacitance
C
(pF)
Drain to Source Voltage V
(V)
DS
100
10
20
50
1
2
5
0
-10
-20
-30
-40
-50
Ciss
Coss
Crss
V
= 0
f = 1 MHz
GS
V
= -4 V, V
= -10 V
PW = 5 s, duty < 1 %
t f
r
t
d(on)
t
d(off)
t
GS
DD
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PDF描述 |
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| 2SJ646-TL | 8000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ646 | 8000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ646-TL | 8000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK1066 | 20 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ574_11 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET High Speed Switching |
| 2SJ575 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Switching |
| 2SJ576 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET High Speed Switching |
| 2SJ577 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ578 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
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