参数资料
型号: 2SJ587
元件分类: 小信号晶体管
英文描述: SMALL SIGNAL, FET
文件页数: 2/8页
文件大小: 39K
代理商: 2SJ587
2SJ587
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
-20
V
Gate to source voltage
V
GSS
±10
V
Drain current
I
D
-50
mA
Drain peak current
I
D(pulse)
Note1
-200
mA
Body-drain diode reverse drain current
I
DR
-50
mA
Channel dissipation
Pch
Note 2
100
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value on the alumina ceramic board (12.5x 20 x0.7 mm)
Electrical Characteristics (Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
-20
V
I
D = -100 A, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±10
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±5
AV
GS = ±8 V, VDS = 0
Zero gate voltege drain
current
I
DSS
——-1
AV
DS = -20 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
-0.8
-1.8
V
I
D = -10A, VDS = -5 V
Static drain to source on state R
DS(on)
4.1
5.0
I
D = -25 mA,VGS = -4 V
Note 3
resistance
R
DS(on)
6.0
8.5
I
D = -10 mA,VGS = -2.5 V
Note 3
Forward transfer admittance
|y
fs|
32.5
50
mS
I
D = -25 mA, VDS = -10 V
Note 3
Input capacitance
Ciss
13
pF
V
DS = -10 V
Output capacitance
Coss
10
pF
V
GS = 0
Reverse transfer capacitance Crss
1.8
pF
f = 1 MHz
Turn-on delay time
t
d(on)
22—ns
I
D = -25 mA, VGS = -4 V
Rise time
t
r
48—ns
R
L = 400
Turn-off delay time
t
d(off)
50—ns
Fall time
t
f
60—ns
Note:
3. Pulse test
4. Marking is DP
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