- 您现在的位置：买卖IC网 > PDF目录30601 > 2SJ599-Z-AZ 20000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB PDF资料下载
参数资料
| 型号： | 2SJ599-Z-AZ |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 20000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 封装： | TO-252, MP-3Z, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 154K |
| 代理商： | 2SJ599-Z-AZ |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SJ599
SWITCHING
P-CHANNEL POWER MOS FET
DATA SHEET
Document No. D14644EJ3V0DS00 (3rd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
2000, 2001
The mark
shows major revised points.
DESCRIPTION
The 2SJ599 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
FEATURES
Low on-state resistance:
RDS(on)1 = 75 m
MAX. (VGS = –10 V, ID = –10 A)
RDS(on)2 = 111 m
MAX. (VGS = –4.0 V, ID = –10 A)
Low input capacitance:
Ciss = 1300 pF TYP. (VDS = –10 V, VGS = 0 V)
Built-in gate protection diode
TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
–60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
m20
A
Drain Current (pulse)
Note1
ID(pulse)
m50
A
Total Power Dissipation (TC = 25°C)
PT
35
W
Total Power Dissipation (TA = 25°C)
PT
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
–20
A
Single Avalanche Energy
Note2
EAS
40
mJ
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = –30 V, RG = 25
, VGS = –20 → 0 V
(TO-251)
(TO-252)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ599
TO-251 (MP-3)
2SJ599-Z
TO-252 (MP-3Z)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ599-Z | 20000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 2SJ600 | 25000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 2SJ600-Z | 25000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 2SJ600 | 25000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 2SJ600-Z | 25000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ599-Z-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ599-Z-E1-A | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ599-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ599-Z-E2 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ599-ZK-E1-AY | 制造商:Renesas Electronics Corporation 功能描述: |
发布紧急采购，3分钟左右您将得到回复。