参数资料
型号: 2SJ599-Z-AZ
元件分类: 小信号晶体管
英文描述: 20000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB
封装: TO-252, MP-3Z, 3 PIN
文件页数: 5/8页
文件大小: 154K
代理商: 2SJ599-Z-AZ
Data Sheet D14644EJ3V0DS
5
2SJ599
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
10
100
1000
10000
–0.1
–1
–10
VGS = 0 V
f = 1 MHz
Coss
Crss
Ciss
–100
SWITCHING CHARACTERISTICS
ID - Drain Current - A
td(on)
,t
r,
t
d(off)
,t
f-
Switching
Time
-
ns
10
1
–1
–0.1
100
1000
–10
–100
tf
tr
td(on)
td(off)
VDD = –30 V
RG = 0
VGS = –10 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
50
0
50
100
150
ID = –10 A
150
100
50
0
–10 V
VGS = –4.0 V
Pulsed
–4.5 V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
–1.0
ISD
-
Diode
Forward
Current
-
A
0
–1.5
VSD - Source to Drain Voltage - V
–0.5
Pulsed
–0.01
–0.1
–1
–10
–100
0 V
VGS = –10 V
–4.0 V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
IF - Drain Current - A
trr
-
Reverse
Recovery
Time
-
ns
di/dt = 100 A/ s
VGS = 0 V
1
0.1
10
1
10
100
1000
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
-
Gate
to
Source
Voltage
-
V
QG - Gate Charge - nC
V
DS
-
Drain
to
Source
Voltage
-
V
10
15
20
25
30
–60
–50
–40
–30
–20
–10
0
VDS
VGS
VDD = –48 V
–30 V
–12 V
ID = –20 A
–12
–10
–8
–6
–4
–2
0
05
相关PDF资料
PDF描述
2SJ599-Z 20000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB
2SJ600 25000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251
2SJ600-Z 25000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB
2SJ600 25000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251
2SJ600-Z 25000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB
相关代理商/技术参数
参数描述
2SJ599-Z-E1 制造商:Renesas Electronics Corporation 功能描述:
2SJ599-Z-E1-A 制造商:Renesas Electronics Corporation 功能描述:
2SJ599-Z-E1-AZ 制造商:Renesas Electronics Corporation 功能描述:
2SJ599-Z-E2 制造商:Renesas Electronics Corporation 功能描述:
2SJ599-ZK-E1-AY 制造商:Renesas Electronics Corporation 功能描述: