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参数资料
| 型号： | 2SJ599-Z-AZ |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 20000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 封装： | TO-252, MP-3Z, 3 PIN |
| 文件页数： | 7/8页 |
| 文件大小： | 154K |
| 代理商： | 2SJ599-Z-AZ |
Data Sheet D14644EJ3V0DS
7
2SJ599
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3)
2) TO-252 (MP-3Z)
1. Gate
2. Drain
3. Source
4. Fin (Drain)
2
13
6.5 ±0.2
5.0 ±0.2
4
1.5
0.1
+0.2
5.5
±0.2
7.0
MIN.
13.7
MIN.
2.3
0.75
0.5 ±0.1
2.3 ±0.2
1.6
±0.2
1.1 ±0.2
0.5 0.1
+0.2
0.5 0.1
+0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
12
3
4
6.5 ±0.2
5.0 ±0.2
4.3
MAX.
0.8
2.3 2.3
0.9
MAX.
5.5
±0.2
10.0
MAX.
2.0 MIN.
1.5
0.1
+0.2
2.3 ±0.2
0.5 ±0.1
0.8
MAX.
0.8
1.0
MIN.
1.8TYP.
0.7
1.1 ±0.2
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ599-Z | 20000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 2SJ600 | 25000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 2SJ600-Z | 25000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 2SJ600 | 25000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 2SJ600-Z | 25000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ599-Z-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ599-Z-E1-A | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ599-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ599-Z-E2 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ599-ZK-E1-AY | 制造商:Renesas Electronics Corporation 功能描述: |
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