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参数资料
| 型号： | 2SJ599-AZ |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 20000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 封装： | TO-251, MP-3, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 154K |
| 代理商： | 2SJ599-AZ |
Data Sheet D14644EJ3V0DS
2
2SJ599
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = –60 V, VGS = 0 V
–10
A
Gate Leakage Current
IGSS
VGS = m20 V, VDS = 0 V
m10
A
Gate Cut-off Voltage
VGS(off)
VDS = –10 V, ID = –1 mA
–1.5
–2.0
–2.5
V
Forward Transfer Admittance
| yfs |
VDS = –10 V, ID = –10 A
8
16
S
Drain to Source On-state Resistance
RDS(on)1
VGS = –10 V, ID = –10 A
60
75
m
RDS(on)2
VGS = –4.0 V, ID = –10 A
78
111
m
Input Capacitance
Ciss
VDS = –10 V
1300
pF
Output Capacitance
Coss
VGS = 0 V
240
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
100
pF
Turn-on Delay Time
td(on)
ID = –10 A
8
ns
Rise Time
tr
VGS = –10 V
9
ns
Turn-off Delay Time
td(off)
VDD = –30 V
52
ns
Fall Time
tf
RG = 0
16
ns
Total Gate Charge
QG
ID = –20 A
26
nC
Gate to Source Charge
QGS
VDD= –48 V
5
nC
Gate to Drain Charge
QGD
VGS = –10 V
7
nC
Body Diode Forward Voltage
VF(S-D)
IF = 20 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 20 A, VGS = 0 V
51
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A /
s
102
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
50
L
VDD
VGS =
20 → 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS()
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave Form
VDS
Wave Form
VGS()
10%
90%
VGS
10%
0
VDS()
90%
td(on)
tr
td(off)
tf
10%
τ
VDS
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG =
2 mA
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ599-Z-AZ | 20000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 2SJ599-Z | 20000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 2SJ600 | 25000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 2SJ600-Z | 25000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 2SJ600 | 25000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ599-Z | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SJ599-Z-AZ | 制造商:Renesas Electronics 功能描述:Pch -60V -20A 75m@10V TO252 Bulk |
| 2SJ599-Z-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ599-Z-E1-A | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ599-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
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