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参数资料
| 型号： | 2SJ599 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 20000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 封装： | TO-251, MP-3, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 154K |
| 代理商： | 2SJ599 |
Data Sheet D14644EJ3V0DS
3
2SJ599
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
Tch - Channel Temperature - C
dT
-
Percentage
of
Rated
Power
-
%
040
20
60
100
140
80
120
160
100
80
60
40
20
0
FORWARD BIAS SAFE OPERATING AREA
ID
-
Drain
Current
-
A
VDS - Drain to Source Voltage - V
–1
–10
–100
–0.1
–1
–10
TC = 25C
Single Pulse
–0.1
–100
Power
Dissipation
Limited
R
DS(on)
Limited
ID(DC)
ID(pulse)
PW
=
10
s
100
s
1 ms
10
ms
DC
PW - Pulse Width - s
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t)
-
Transient
Thermal
Resistance
-
C
/W
10
0.01
0.1
1
100
1000
1 m
10 m
100 m
1
10
100
1000
Single Pulse
10
100
Rth(j-C) = 3.57 C/W
Rth(j-A) = 125C/W
TC - Case Temperature - C
P
T
-Total
Power
Dissipation
-
W
0
80
20
40
60
100
140
120
160
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
50
40
30
20
10
0
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ599-AZ | 20000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 2SJ599-Z-AZ | 20000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 2SJ599-Z | 20000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 2SJ600 | 25000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 2SJ600-Z | 25000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ599-AZ | 制造商:Renesas Electronics 功能描述:Pch -60V -12A 130m@10V TO251 制造商:Renesas Electronics 功能描述:Pch -60V -12A 130m@10V TO251 Bulk 制造商:Renesas Electronics 功能描述:Pch -60V -12A 130m@10V TO251 Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 20A 3-Pin(3+Tab) TO-251 |
| 2SJ599-Z | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SJ599-Z-AZ | 制造商:Renesas Electronics 功能描述:Pch -60V -20A 75m@10V TO252 Bulk |
| 2SJ599-Z-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ599-Z-E1-A | 制造商:Renesas Electronics Corporation 功能描述: |
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