参数资料
型号: 2SJ600-AZ
元件分类: 小信号晶体管
英文描述: 25000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251
封装: TO-251, MP-3, 3 PIN
文件页数: 4/8页
文件大小: 157K
代理商: 2SJ600-AZ
Data Sheet D14645EJ3V0DS
4
2SJ600
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
ID
-
Drain
Current
-
A
Pulsed
–1
–2
–3
–4
–5
VDS = –10 V
–10
–1
–0.1
–100
TA =
40C
25C
75C
125C
–0.01
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
0
–2
–3
–4
–100
–80
–60
–40
–20
0
–1
Pulsed
VGS = –10 V
–5
–4.5 V
–4.0 V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
ID - Drain Current - A
|
y
fs
|
-
Forward
Transfer
Admittance
-
S
–0.01
–0.1
–1
10
100
–10
–100
0.1
1
Pulsed
VDS = –10 V
0.01
TA = 125C
75C
25C
40C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
0
–5
–10
–15
–20
Pulsed
100
80
60
40
20
0
ID = –5 A
ID = –25 A
ID = –13 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
–1
–0.1
–10
–100
Pulsed
VGS = –4.0 V
–4.5 V
–10 V
0
20
40
60
80
100
120
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
V
GS(off)
-
Gate
Cut-off
Voltage
-
V
VDS = –10 V
ID = –1 mA
–1.0
–2.0
–3.0
–50
0
50
100
0
150
–4.0
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