参数资料
型号: 2SJ601-Z-AZ
元件分类: 小信号晶体管
英文描述: 36000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB
封装: TO-252, MP-3Z, 3 PIN
文件页数: 1/8页
文件大小: 170K
代理商: 2SJ601-Z-AZ
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MOS FIELD EFFECT TRANSISTOR
2SJ601
SWITCHING
P-CHANNEL POWER MOS FET
DATA SHEET
Document No. D14646EJ4V0DS00 (4th edition)
Date Published August 2004 NS CP(K)
Printed in Japan
2000, 2001
The mark
shows major revised points.
DESCRIPTION
The 2SJ601 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
FEATURES
Low on-state resistance:
RDS(on)1 = 31 m
MAX. (VGS = –10 V, ID = –18 A)
RDS(on)2 = 46 m
MAX. (VGS = –4.0 V, ID = –18 A)
Low input capacitance:
Ciss = 3300 pF TYP. (VDS = –10 V, VGS = 0 V)
Built-in gate protection diode
TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
–60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
m36
A
Drain Current (pulse)
Note1
ID(pulse)
m120
A
Total Power Dissipation (TC = 25°C)
PT
65
W
Total Power Dissipation (TA = 25°C)
PT
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
–35
A
Single Avalanche Energy
Note2
EAS
123
mJ
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = –30 V, RG = 25
, VGS = –20 → 0 V
(TO-251)
(TO-252)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ601
TO-251 (MP-3)
2SJ601-Z
TO-252 (MP-3Z)
相关PDF资料
PDF描述
2SK3366-AZ 20000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251
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2SK3367-AZ 36000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251
2SK3367-Z-AZ 36000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB
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相关代理商/技术参数
参数描述
2SJ601-Z-E1 制造商:Renesas Electronics Corporation 功能描述:
2SJ601-Z-E1-AZ 制造商:Renesas Electronics Corporation 功能描述:
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