参数资料
型号: 2SK3367-Z-AZ
元件分类: 小信号晶体管
英文描述: 36000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB
封装: TO-252, MP-3Z, 3 PIN
文件页数: 1/7页
文件大小: 129K
代理商: 2SK3367-Z-AZ
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MOS FIELD EFFECT TRANSISTOR
2SK3367
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No.
D14257EJ3V0DS00 (3rd edition)
Date Published
August 2004 NS CP(K)
Printed in Japan
The mark
★ shows major revised points.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3367
TO-251 (MP-3)
2SK3367-Z
TO-252 (MP-3Z)
DESCRIPTION
The 2SK3367 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook
computers.
FEATURES
Low on-resistance
RDS(on)1 = 9.0 m
MAX. (VGS = 10 V, ID = 18 A)
RDS(on)2 = 12.0 m
MAX. (VGS = 4.5 V, ID = 18 A)
RDS(on)3 = 14.0 m
MAX. (VGS = 4.0 V, ID = 18 A)
Low Ciss : Ciss = 2800 pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC)
ID(DC)
±36
A
Drain Current (Pulse)
Note
ID(pulse)
±144
A
Total Power Dissipation (TC = 25 °C)
PT
40
W
Total Power Dissipation (TA = 25 °C)
PT
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to + 150
°C
Note PW
≤ 10
s, Duty cycle ≤ 1%
THERMAL RESISTANCE
Channel to case Thermal Resistance
Rth(ch-C)
3.13
°C/W
Channel to ambient Thermal Resistance
Rth(ch-A)
125
°C/W
1999
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