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参数资料
| 型号： | 2SK3483-Z-AZ |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 28000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 封装： | TO-252, MP-3Z, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 164K |
| 代理商： | 2SK3483-Z-AZ |
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MOS FIELD EFFECT TRANSISTOR
2SK3483
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D15068EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2001
DESCRIPTION
The 2SK3483 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Low on-state resistance
RDS(on)1 = 52 m
MAX. (VGS = 10 V, ID = 14 A)
RDS(on)2 = 59 m
MAX. (VGS = 4.5 V, ID = 14 A)
Low Ciss: Ciss = 2300 pF TYP.
Built-in gate protection diode
TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0V)
VDSS
100
V
Gate to Source Voltage (VDS = 0V)
VGSS
±20
V
Drain Current (DC)
ID(DC)
±28
A
Drain Current (Pulse)
Note1
ID(pulse)
±60
A
Total Power Dissipation (TC = 25°C)
PT
40
W
Total Power Dissipation (TA = 25°C)
PT
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
25
A
Single Avalanche Energy
Note2
EAS
62.5
mJ
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, RG = 25 , VGS = 20
→ 0 V
(TO-251)
(TO-252)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3483
TO-251 (MP-3)
2SK3483-Z
TO-252 (MP-3Z)
相关PDF资料 |
PDF描述 |
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| 2SK3484-Z | 16000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 2SK3484-Z-AZ | 16000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 2SD1861TV2 | 2000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SK2415 | 8000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AB |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3483-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3483-Z-E2-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3484 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3484-AZ | 功能描述:MOSFET N-CH 100V MP-3/TO-251 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK3484-Z | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
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