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参数资料
| 型号： | 2SJ602-Z-AZ |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 60 V, 0.107 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | MP-25Z, TO-220SMD, 3 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 82K |
| 代理商： | 2SJ602-Z-AZ |
Data Sheet D14647EJ3V0DS
2
2SJ602
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS =
60 V, VGS = 0 V
10
A
Gate Leakage Current
IGSS
VGS =
m 20 V, VDS = 0 V
m 10
A
Gate Cut-off Voltage
VGS(off)
VDS =
10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| yfs |VDS =
10 V, ID = 10 A
8
16
S
Drain to Source On-state Resistance
RDS(on)1
VGS =
10 V, ID = 10 A
59
73
m
RDS(on)2
VGS =
4.0 V, ID = 10 A
75
107
m
Input Capacitance
Ciss
VDS =
10 V
1300
pF
Output Capacitance
Coss
VGS = 0 V
240
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
100
pF
Turn-on Delay Time
td(on)
VDD =
30 V, ID = 10 A
9
ns
Rise Time
tr
VGS =
10 V
12
ns
Turn-off Delay Time
td(off)
RG = 0
54
ns
Fall Time
tf
15
ns
Total Gate Charge
QG
VDD=
48 V
26
nC
Gate to Source Charge
QGS
VGS =
10 V
5
nC
Gate to Drain Charge
QGD
ID =
20 A
7
nC
Body Diode Forward Voltage
VF(S-D)
IF = 20 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 20 A, VGS = 0 V
50
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A /
s
110
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
50
PG.
L
VDD
VGS =
20 → 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS (
)
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave Form
VDS
Wave Form
VGS (
)
10%
90%
10%
0
VDS (
)
90%
td(on)
tr
td(off)
tf
10%
τ
VDS
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG =
2 mA
VGS
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ602-AZ | 20 A, 60 V, 0.107 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ602-ZJ | 20 A, 60 V, 0.107 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SJ602-S-AZ | 20 A, 60 V, 0.107 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SJ604-S | 45 A, 60 V, 0.043 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SJ604 | 45 A, 60 V, 0.043 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ602-ZJ | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ603 | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
| 2SJ603-S | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ603-Z | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ603-ZJ | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
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