参数资料
型号: 2SJ602-Z-AZ
元件分类: JFETs
英文描述: 20 A, 60 V, 0.107 ohm, P-CHANNEL, Si, POWER, MOSFET
封装: MP-25Z, TO-220SMD, 3 PIN
文件页数: 4/7页
文件大小: 82K
代理商: 2SJ602-Z-AZ
Data Sheet D14647EJ3V0DS
4
2SJ602
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
–1
–0.1
150
100
50
0
–10
–100
Pulsed
VGS = –4.0 V
–4.5 V
–10 V
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
ID
-
Drain
Current
-
A
Pulsed
–1
–2
–3
–4
–5
VDS = –10 V
–10
–1
–0.1
–100
TA =
55C
25C
75C
125C
–0.01
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
ID - Drain Current - A
|
y
fs
|
-
Forward
Transfer
Admittance
-
S
–0.01
–0.1
–1
10
100
–10
–100
0.1
1
Pulsed
VDS = –10 V
0.01
TA = 125C
75C
25C
55C
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
V
GS(off)
-
Gate
Cut-off
Voltage
-
V
VDS = –10 V
ID = –1 mA
–1.0
–2.0
–3.0
–50
0
50
100
0
150
–4.0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
0
–4
–6
–8
–60
–50
–40
–30
–20
–10
0
–2
Pulsed
–10
–4.5 V
–4.0 V
VGS = –10 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
0
–5
–10
–15
–20
Pulsed
120
100
80
60
40
20
0
ID = –20 A
–10 A
–4 A
相关PDF资料
PDF描述
2SJ602-AZ 20 A, 60 V, 0.107 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SJ602-ZJ 20 A, 60 V, 0.107 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
2SJ602-S-AZ 20 A, 60 V, 0.107 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA
2SJ604-S 45 A, 60 V, 0.043 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA
2SJ604 45 A, 60 V, 0.043 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
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2SJ603-ZJ 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR