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参数资料
| 型号： | 2SJ606-AZ |
| 元件分类： | JFETs |
| 英文描述： | 83 A, 60 V, 0.023 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | MP-25, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 78K |
| 代理商： | 2SJ606-AZ |
Data Sheet D14654EJ3V0DS
4
2SJ606
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
ID
-
Drain
Current
-
A
1
2
3
4
5
VDS =
10 V
Pulsed
100
10
1
1000
0.1
TA =
55C
25C
75C
150C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
0
2
3
4
250
200
150
100
50
0
1
Pulsed
5
4.0 V
VGS =
10 V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
ID - Drain Current - A
|
y
fs
|
-
Forward
Transfer
Admittance
-
S
0.01
0.1
1
100
1000
10
100
1
10
Pulsed
VDS =
10 V
0.1
TA = 150C
75C
25C
55C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
0
5
10
15
20
Pulsed
25
20
15
10
5
0
ID =
83 A
42 A
17 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
10
1
50
40
30
20
10
0
100
1000
Pulsed
VGS =
4.0 V
4.5 V
10 V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
V
GS(off)
-
Gate
Cut-off
Voltage
-
V
VDS =
10 V
ID =
1 mA
1.0
2.0
3.0
50
0
50
100
0
150
4.0
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ606-Z-AZ | 83 A, 60 V, 0.023 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ610(2-7J1B) | 2 A, 250 V, 2.55 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ613 | 6 A, 20 V, 0.069 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ615 | 2500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ615 | 2500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ606-S | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ606-Z | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ606-Z(AZ) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SJ606-ZJ | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ607 | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
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