参数资料
型号: 2SJ606-AZ
元件分类: JFETs
英文描述: 83 A, 60 V, 0.023 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: MP-25, 3 PIN
文件页数: 5/8页
文件大小: 78K
代理商: 2SJ606-AZ
Data Sheet D14654EJ3V0DS
5
2SJ606
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
50
0
50
100
150
ID = –42 A
30
20
10
0
Pulsed
10 V
VGS =
4.0 V
4.5 V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1.0
ISD
-
Diode
Forward
Current
-
A
0
1.5
VSD - Source to Drain Voltage - V
0.5
Pulsed
0.1
1
10
100
1000
2.0
4.0 V
VGS =
10 V
0 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
100
1000
10000
100000
0.1
1
10
VGS = 0 V
f = 1 MHz
Crss
Ciss
100
Coss
SWITCHING CHARACTERISTICS
ID - Drain Current - A
td(on)
,t
r,
t
d(off)
,t
f-
Switching
Time
-
ns
10
1
0.1
100
1000
10
100
tf
tr
td(on)
td(off)
VDD =
30 V
VGS =
10 V
RG = 0
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
-
Gate
to
Source
Voltage
-
V
QG - Gate Charge - nC
V
DS
-
Drain
to
Source
Voltage
-
V
040
60
20
80
100
120
140
60
50
40
30
20
10
0
VDS
VGS
VDD =
48 V
30 V
12 V
ID =
83 A
12
10
8
6
4
2
0
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
L - Inductive Load - H
IAS
-
Single
Avalanche
Current
-
A
10
100
1000
1 m
10 m
VDD =
30 V
RG = 25
VGS =
20 → 0 V
IAS =
40 A
10
100
1
E
AS = 160
mJ
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