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参数资料
| 型号： | 2SJ607-Z |
| 元件分类： | JFETs |
| 英文描述： | 83 A, 60 V, 0.016 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | MP-25Z, TO-220SMD, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 78K |
| 代理商： | 2SJ607-Z |
Data Sheet D14655EJ3V0DS
4
2SJ607
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
ID
-
Drain
Current
-
A
Pulsed
1
2
3
4
5
VDS =
10 V
100
10
1
1000
0.1
TA =
55C
25C
75C
125C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
0
2
3
4
300
240
180
120
60
0
1
Pulsed
5
4.0 V
4.5 V
VGS =
10 V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
ID - Drain Current - A
|
y
fs
|
-
Forward
Transfer
Admittance
-
S
0.01
0.1
1
100
1000
10
100
1
10
Pulsed
VDS =
10 V
0.1
TA = 125C
75C
25C
55C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
0
2
4
6
8
Pulsed
30
20
10
0
10
ID =
83 A
42 A
17 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
10
1
20
16
12
8
4
0
100
1000
Pulsed
4.5 V
10 V
VGS =
4.0 V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
V
GS(off)
-
Gate
Cut-off
Voltage
-
V
VDS =
10 V
ID =
1 mA
1.0
2.0
3.0
50
0
50
100
0
150
4.0
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ607-Z-AZ | 制造商:Renesas Electronics 功能描述:Pch -60V -83A 11m@10V TO220SMD Bulk 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 83A 3-Pin(2+Tab) TO-263 |
| 2SJ607-ZJ | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ607-ZJ-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ608 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 4A I(D) | SIP |
| 2SJ609 | 制造商:ON Semiconductor 功能描述: |
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