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参数资料
| 型号： | 2SJ607-Z |
| 元件分类： | JFETs |
| 英文描述： | 83 A, 60 V, 0.016 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | MP-25Z, TO-220SMD, 3 PIN |
| 文件页数： | 5/8页 |
| 文件大小： | 78K |
| 代理商： | 2SJ607-Z |
Data Sheet D14655EJ3V0DS
5
2SJ607
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
50
0
50
100
150
ID =
42 A
20
16
12
8
4
0
Pulsed
10 V
VGS =
4.0 V
4.5 V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1.0
ISD
-
Diode
Forward
Current
-
A
0
1.5
VSD - Source to Drain Voltage - V
0.5
Pulsed
0.1
1
10
100
1000
2.0
4.0 V
VGS =
10 V
0 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
100
1000
10000
100000
0.1
1
10
VGS = 0 V
f = 1 MHz
Ciss
100
Coss
Crss
SWITCHING CHARACTERISTICS
ID - Drain Current - A
td(on)
,t
r,
t
d(off)
,t
f-
Switching
Time
-
ns
10
1
0.1
100
1000
10
100
tf
tr
td(on)
td(off)
VDD =
30 V
VGS =
10 V
RG = 0
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
-
Gate
to
Source
Voltage
-
V
QG - Gate Charge - nC
V
DS
-
Drain
to
Source
Voltage
-
V
0
40
80
120
160
60
50
40
30
20
10
0
VDS
ID =
83 A
12
10
8
6
4
2
0
200
VGS
VDD =
48 V
30 V
12 V
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
L - Inductive Load - H
IAS
-
Single
Avalanche
Current
-
A
10
100
1000
1 m10 m
VDD =
30 V
RG = 25
VGS =
20 → 0 V
IAS =
50 A
10
100
1
E
AS = 250
mJ
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ607-Z-AZ | 制造商:Renesas Electronics 功能描述:Pch -60V -83A 11m@10V TO220SMD Bulk 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 83A 3-Pin(2+Tab) TO-263 |
| 2SJ607-ZJ | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ607-ZJ-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ608 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 4A I(D) | SIP |
| 2SJ609 | 制造商:ON Semiconductor 功能描述: |
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