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参数资料
| 型号： | 2SJ619 |
| 元件分类： | JFETs |
| 英文描述： | 16 A, 100 V, 0.32 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-9F1B, SC-97, 4 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 178K |
| 代理商： | 2SJ619 |
2SJ619
2009-09-29
4
Drain
po
wer
di
ssip
ation
P
D
(W)
Gate
th
resh
old
vol
tage
V
th
(V)
Case temperature
Tc (°C)
RDS (ON) Tc
Drain-
sou
rce
on
re
sis
tan
ce
R
DS
(ON)
(
Ω
)
Drain-source voltage VDS (V)
IDR VDS
Drain
re
ver
se
cur
re
nt
I DR
(A)
Drain-source voltage VDS (V)
Capacitance – VDS
C
ap
aci
ta
nc
e
C
(p
F
)
Case temperature Tc (°C)
Vth Tc
Case temperature
Tc (°C)
PD Tc
Drain-
sou
rce
volt
ag
e
V
DS
(V)
Gate-
sour
ce
volt
ag
e
V
GS
(V)
Total gate charge Qg (nC)
Dynamic input/output characteristics
0.3
30
0.5
3
10
5
1.0
Common source
Tc
= 25°C
pulse test
3
VGS = 10 V
5
1
2
0, 1
0
0.2
0.4
0.6
0.8
1.0
0
0.5
0.1
0.3
0.2
0.4
Common source
pulse test
ID = 8 V
4
8
2
2, 4
VGS = 4 V
VGS = 10
80
40
0
40
80
160
120
100
300
1000
1
0.1
100
10
Ciss
Coss
Crss
Common source
VGS
= 0 V
f
= 1 MHz
Tc
= 25°C
10
30
500
3000
0.3
3
30
5000
50
100
20
40
80
0
80
120
200
40
160
60
100
20
60
40
80
0
Common source
ID = 16 A
Tc
= 25°C
pulse test
40
VDD = 80 V
VGS
VDS
20
4
12
8
16
0
20
40
60
80
100
0
40
80
120
160
1
3
2
4
0
80
40
Common source
VDS = 10 V
ID = 1 mA
pulse test
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ619(TE24L,Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 100V 16A SC-97 |
| 2SJ619_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon P Channel MOS Type Switching Regulator and DC-DC Converter Applications |
| 2SJ619_09 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Switching Regulator and DC-DC Converter Applications Motor Drive Applications |
| 2SJ620 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-ヰ-MOSV) |
| 2SJ620(TE24L,Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 60V 5A 4-Pin(2+2Tab) TFP T/R |
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