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参数资料
| 型号： | 2SJ620 |
| 元件分类： | JFETs |
| 英文描述： | 18 A, 100 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-9F1B, SC-97, 4 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 201K |
| 代理商： | 2SJ620 |
2SJ620
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV)
2SJ620
Switching Regulator and DC-DC Converter Applications
Motor Drive Applications
4-V gate drive
Low drain-source ON resistance: RDS (ON) = 63 m (typ.)
High forward transfer admittance: |Yfs| = 15 S (typ.)
Low leakage current: IDSS = 100 A (max) (VDS = 100 V)
Enhancement model: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
= 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
100
V
Drain-gate voltage (RGS = 20 k)
VDGR
100
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
18
Drain current
Pulse (Note 1)
IDP
72
A
Drain power dissipation (Tc
= 25°C)
PD
125
W
Single pulse avalanche energy
(Note 2)
EAS
937
mJ
Avalanche current
IAR
18
A
Repetitive avalanche energy (Note 3)
EAR
12.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
1.0
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 3.56 mH, RG = 25 ,
IAR = 18 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
JEDEC
―
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Circuit Configuration
1
3
4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ620(TE24L,Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 60V 5A 4-Pin(2+2Tab) TFP T/R |
| 2SJ620_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon P Channel MOS Type Switching Regulator and DC-DC Converter Applications |
| 2SJ620_09 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Switching Regulator and DC-DC Converter Applications Motor Drive Applications |
| 2SJ621 | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ621-T1B | 制造商:Renesas Electronics Corporation 功能描述: |
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