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参数资料
| 型号： | 2SJ620 |
| 元件分类： | JFETs |
| 英文描述： | 18 A, 100 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-9F1B, SC-97, 4 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 201K |
| 代理商： | 2SJ620 |
2SJ620
2004-07-06
4
200
40
120
80
0
40
VDD = 80 V
VGS
VDS
16
4
12
8
0
20
40
80
120
160
200
Common source
ID = 18 A
Tc
= 25°C
pulse test
Drain
po
w
er
diss
ip
a
tion
P
D
(W
)
Gate
th
res
ho
ld
vol
ta
g
e
V
th
(V
)
Case temperature
Tc (°C)
RDS (ON) Tc
Dr
ai
n-
so
ur
ce
o
nr
esi
st
an
ce
R
DS
(
O
N)
(
)
Drain-source voltage VDS (V)
IDR VDS
Drai
n
r
e
ve
rs
ec
ur
re
nt
I DR
(
A
)
Drain-source voltage VDS (V)
Capacitance – VDS
Cap
acitanc
e
C
(p
F)
Case temperature Tc (°C)
Vth Tc
Case temperature
Tc (°C)
PD Tc
Dr
ai
n-
so
ur
ce
vo
ltag
e
V
DS
(V
)
G
at
e
-s
ou
rc
evo
ltag
e
V
GS
(V)
Total gate charge Qg (nC)
Dynamic input/output characteristics
0
0.20
0.10
0.05
0.15
80
40
0
40
80
160
120
Common source
pulse test
ID = 18 A
9
4.5
VGS = 4 V
VGS = 10 V
0.3
100
0.5
3
10
5
1.0
0
0.4
1.2
1.6
2.0
2.4
0.8
30
50
Common source
Tc
= 25°C
pulse test
1
VGS = 0, 1 V
5
10
1000
3000
1
0.1
100
10
Ciss
Coss
Crss
Common source
VGS = 0 V
f
= 1 MHz
Tc
= 25°C
100
300
5000
30000
0.3
3
30
50000
500
10000
0
40
80
120
160
1
3
2
4
0
80
40
Common source
VDS = 10 V
ID = 1 mA
pulse test
200
50
100
0
150
40
80
120
160
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ620(TE24L,Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 60V 5A 4-Pin(2+2Tab) TFP T/R |
| 2SJ620_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon P Channel MOS Type Switching Regulator and DC-DC Converter Applications |
| 2SJ620_09 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Switching Regulator and DC-DC Converter Applications Motor Drive Applications |
| 2SJ621 | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ621-T1B | 制造商:Renesas Electronics Corporation 功能描述: |
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