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参数资料
| 型号： | 2SJ633 |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 4000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | TP, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 31K |
| 代理商： | 2SJ633 |
2SJ633
No.7421-2/4
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--60
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
--4
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
--16
A
Allowable Power Dissipation
PD
1W
Tc=25
°C15
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0
--60
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--60V, VGS=0
--1
A
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.2
--2.6
V
Forward Transfer Admittance
yfs
VDS=--10V, ID=--2A
1.5
3
S
RDS(on)1
ID=--2A, VGS=--10V
280
365
m
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=--2A, VGS=--4V
405
565
m
Input Capacitance
Ciss
VDS=--20V, f=1MHz
365
pF
Output Capacitance
Coss
VDS=--20V, f=1MHz
39
pF
Reverse Transfer Capacitance
Crss
VDS=--20V, f=1MHz
30
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
9
ns
Rise Time
tr
See specified Test Circuit.
45
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
33
ns
Fall Time
tf
See specified Test Circuit.
41
ns
Total Gate Charge
Qg
VDS=--30V, VGS=--10V, ID=--4A
9
nC
Gate-to-Source Charge
Qgs
VDS=--30V, VGS=--10V, ID=--4A
1.7
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--30V, VGS=--10V, ID=--4A
1.7
nC
Diode Forward Voltage
VSD
IS=--4A, VGS=0
--0.9
--1.2
V
Switching Time Test Circuit
PW=10
s
D.C.
≤1%
0V
--10V
VIN
P.G
50
G
S
ID= --2A
RL=15
VDD= --30V
VOUT
2SJ633
VIN
D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ633-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 60V 4A TO-251 |
| 2SJ634 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:DC/ DC CONVERTER TRANSISTOR |
| 2SJ634-TL-E | 制造商:SANYO 功能描述:MOSFET, P CH, 60V, 8A, TO-251 Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 60V 8A TO-251 制造商:Sanyo 功能描述:0 |
| 2SJ635 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 2SJ635-TL-E | 制造商:Rochester Electronics LLC 功能描述: 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 60V 12A TO-251 制造商:Sony Semiconductor Solutions Division 功能描述: |
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