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参数资料
| 型号： | 2SJ659-TL |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | JFETs |
| 英文描述： | 14 A, 60 V, 0.206 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SMP-FD, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 53K |
| 代理商： | 2SJ659-TL |
2
Power Transistors
2SD1539, 2SD1539A
PC —Ta
IC —VCE
VCE(sat) —IC
VBE(sat) —IC
hFE —IC
fT —IC
ton, tstg, tf — IC
Area of safe operation (ASO)
0
150
125
100
25
75
50
0
40
30
10
25
35
20
5
15
(1) T
C=Ta
(2) With a 100
× 100 × 2mm
Al heat sink
(3) With a 50
× 50 × 2mm
Al heat sink
(4) Without heat sink
(P
C=2W)
(1)
(2)
(3)
(4)
Ambient temperature Ta (C)
Collector
power
dissipation
P
C
(W
)
012
10
8
26
4
0
6
5
4
3
2
1
T
C=25C
I
B=60mA
50mA
40mA
30mA
20mA
10mA
5mA
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C/IB=10
T
C=100C
25C
–25C
Collector current I
C
(A)
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C/IB=10
T
C=–25C
25C
100C
Collector current I
C
(A)
Base
to
emitter
saturation
voltage
V
BE(sat)
(V
)
0.1
1
10
100
0.3
3
30
1
3
10
30
100
300
1000
3000
10000
V
CE=2V
T
C=100C
25C
–25C
Collector current I
C
(A)
Forward
current
transfer
ratio
h
FE
0.01
0.1
1
10
0.03
0.3
3
1
3
10
30
100
300
1000
3000
10000
V
CE=5V
f=10MHz
T
C=25C
Collector current I
C
(A)
Transition
frequency
f
T
(MHz
)
08
26
47
15
3
0.01
10
1
0.1
0.03
0.3
3
Pulsed t
w=1ms
Duty cycle=1%
I
C/IB=10 (IB1=–IB2)
V
CC=20V
T
C=25C
t
stg
t
f
t
on
Collector current I
C
(A)
Switching
time
t
on
,t
stg
,t
f
(
s
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C=25C
I
CP
I
C
10ms
DC
t=1ms
2SD1539
2SD1539A
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ659 | 14 A, 60 V, 0.206 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ659-TL | 14 A, 60 V, 0.206 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ661 | 38 A, 60 V, 0.056 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ665-TL | 27 A, 100 V, 0.105 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ665 | 27 A, 100 V, 0.105 ohm, P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ660 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device |
| 2SJ661 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device |
| 2SJ661_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 2SJ661-1E | 功能描述:MOSFET P-CH 60V 38A 制造商:on semiconductor 系列:- 包装:管件 零件状态:有效 FET 类型:MOSFET P 通道，金属氧化物 FET 功能:逻辑电平栅极，4V 驱动 漏源极电压（Vdss）:60V 电流 - 连续漏极（Id）（25°C 时）:38A（Ta） 不同?Id，Vgs 时的?Rds On（最大值）:39 毫欧 @ 19A，10V 不同 Id 时的 Vgs（th）（最大值）:- 不同 Vgs 时的栅极电荷（Qg）:80nC @ 10V 不同 Vds 时的输入电容（Ciss）:4360pF @ 20V 功率 - 最大值:1.65W 工作温度:150°C（TJ） 安装类型:通孔 封装/外壳:TO-262-3，长引线，I2Pak，TO-262AA 供应商器件封装:TO-262-3 标准包装:50 |
| 2SJ661-DL-1E | 制造商:ON Semiconductor 功能描述:PCH 4V DRIVE SERIES - Tape and Reel |
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