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参数资料
| 型号： | 2SJ637 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 5000 mA, 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | TP, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 31K |
| 代理商： | 2SJ637 |
2SJ637
No.7528-2/4
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--100
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
--5
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
--20
A
Allowable Power Dissipation
PD
1W
Tc=25
°C20
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0
--100
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--100V, VGS=0
--1
A
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.2
--2.6
V
Forward Transfer Admittance
yfs
VDS=--10V, ID=--2.5A
3
5
S
RDS(on)1
ID=--2.5A, VGS=--10V
240
312
m
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=--2.5A, VGS=--4V
320
450
m
Input Capacitance
Ciss
VDS=--20V, f=1MHz
935
pF
Output Capacitance
Coss
VDS=--20V, f=1MHz
71
pF
Reverse Transfer Capacitance
Crss
VDS=--20V, f=1MHz
48
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
12
ns
Rise Time
tr
See specified Test Circuit.
70
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
80
ns
Fall Time
tf
See specified Test Circuit.
52
ns
Total Gate Charge
Qg
VDS=--50V, VGS=--10V, ID=--5A
20
nC
Gate-to-Source Charge
Qgs
VDS=--50V, VGS=--10V, ID=--5A
4.5
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--50V, VGS=--10V, ID=--5A
4.5
nC
Diode Forward Voltage
VSD
IS=--5A, VGS=0
--0.89
--1.2
V
Switching Time Test Circuit
PW=10
s
D.C.
≤1%
0V
--10V
VIN
P.G
50
G
S
ID= --2.5A
RL=20
VDD= --50V
VOUT
2SJ637
VIN
D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ643 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P CHANNEL MOS SILICON TRANSISTOR |
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| 2SJ645-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 20V 8A TO251 |
| 2SJ646 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:2SJ646 |
| 2SJ646-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 30V 8A TO251 |
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