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参数资料
| 型号： | 2SJ645 |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 8000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | TP, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 35K |
| 代理商： | 2SJ645 |
2SJ645
No.8334-1/4
Features
Low ON-resistance.
2.5V drive.
Ultrahigh-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--20
V
Gate-to-Source Voltage
VGSS
±10
V
Drain Current (DC)
ID
--8
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
--32
A
Allowable Power Dissipation
PD
1W
Tc=25
°C20
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0V
--20
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--20V, VGS=0V
--1
A
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0V
±10
A
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--0.4
--1.4
V
Forward Transfer Admittance
yfs
VDS=--10V, ID=--4A
5.6
8
S
RDS(on)1
ID=--4A, VGS=--4.5V
55
72
m
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=--2A, VGS=--2.5V
77
108
m
Input Capacitance
Ciss
VDS=--10V, f=1MHz
680
pF
Output Capacitance
Coss
VDS=--10V, f=1MHz
115
pF
Reverse Transfer Capacitance
Crss
VDS=--10V, f=1MHz
80
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
12
ns
Rise Time
tr
See specified Test Circuit.
120
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
55
ns
Fall Time
tf
See specified Test Circuit.
65
ns
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8334
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
62005PA MS IM TB-00001398
2SJ645
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ648 | 400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ648-A | 400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ649 | 20 A, 60 V, 0.075 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ651 | 20 A, 60 V, 0.092 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ663-TL | 9 A, 100 V, 0.45 ohm, P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ645-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 20V 8A TO251 |
| 2SJ646 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:2SJ646 |
| 2SJ646-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 30V 8A TO251 |
| 2SJ647 | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ647-T1-A | 制造商:Renesas Electronics Corporation 功能描述: |
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