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参数资料
| 型号： | 2SJ648 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | USM, SC-75, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 135K |
| 代理商： | 2SJ648 |
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MOS FIELD EFFECT TRANSISTOR
2SJ648
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. D16597EJ2V0DS00 (2nd edition)
Date Published November 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2003
PACKAGE DRAWING (Unit: mm)
0.3
1.6
±
0.1
0.8
±
0.1
2
0.2
+0.1
–0
0.5
1: Source
2: Gate
3: Drain
0.5
1.0
1.6 ± 0.1
3
1
0.6
0.75 ± 0.05
0 to 0.1
0.15
+0.1
–0.05
+0.1
–0
DESCRIPTION
The 2SJ648 is a switching device which can be driven directly by a
2.5 V power source.
The 2SJ648 features a low on-state resistance and excellent
switching characteristics, and is suitable for
applications such as
power switch of portable machine and so on.
FEATURES
2.5 V drive available
Low on-state resistance
RDS(on)1 = 1.45
MAX. (VGS = 4.5 V, ID = 0.2 A)
RDS(on)2 = 1.55
MAX. (VGS = 4.0 V, ID = 0.2 A)
RDS(on)3 = 2.98
MAX. (VGS = 2.5 V, ID = 0.15 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ648
SC-75 (USM)
Marking: H1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
20
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m12
V
Drain Current (DC)
ID(DC)
m0.4
A
Drain Current (pulse)
Note1
ID(pulse)
m1.6
A
Total Power Dissipation
Note2
PT
200
mW
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1%
2. Mounted on ceramic substrate of 300 mm
2 x 0.64 mm.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
Caution
This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
VESD = ±100 V TYP. (C = 200 pF, R = 0
, Single pulse)
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ648-A | 400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ649 | 20 A, 60 V, 0.075 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ651 | 20 A, 60 V, 0.092 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ663-TL | 9 A, 100 V, 0.45 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ664 | 17 A, 100 V, 0.193 ohm, P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ648-T1-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 20V 0.4A 3-Pin SC-75 T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,20V,0.4A,1.17ohm,USM3 制造商:Renesas 功能描述:Trans MOSFET P-CH 20V 0.4A 3-Pin SC-75 T/R |
| 2SJ649 | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ649-AZ | 功能描述:MOSFET P-CH -60V -20A TO-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SJ650 | 功能描述:MOSFET P-CH 60V 12A TO-220ML RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SJ651 | 功能描述:MOSFET P-CH 60V 20A TO-220ML RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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