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参数资料
| 型号： | 2SJ659-TL |
| 元件分类： | JFETs |
| 英文描述： | 14 A, 60 V, 0.206 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SMP-FD, 3 PIN |
| 文件页数： | 3/3页 |
| 文件大小： | 53K |
| 代理商： | 2SJ659-TL |
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semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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Consult our sales staff in advance for information on the following applications:
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Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
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相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ661 | 38 A, 60 V, 0.056 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ665-TL | 27 A, 100 V, 0.105 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ665 | 27 A, 100 V, 0.105 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ665 | 27 A, 100 V, 0.105 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ76-E | 0.5 A, 140 V, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ660 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device |
| 2SJ661 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device |
| 2SJ661_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 2SJ661-1E | 功能描述:MOSFET P-CH 60V 38A 制造商:on semiconductor 系列:- 包装:管件 零件状态:有效 FET 类型:MOSFET P 通道，金属氧化物 FET 功能:逻辑电平栅极，4V 驱动 漏源极电压（Vdss）:60V 电流 - 连续漏极（Id）（25°C 时）:38A（Ta） 不同?Id，Vgs 时的?Rds On（最大值）:39 毫欧 @ 19A，10V 不同 Id 时的 Vgs（th）（最大值）:- 不同 Vgs 时的栅极电荷（Qg）:80nC @ 10V 不同 Vds 时的输入电容（Ciss）:4360pF @ 20V 功率 - 最大值:1.65W 工作温度:150°C（TJ） 安装类型:通孔 封装/外壳:TO-262-3，长引线，I2Pak，TO-262AA 供应商器件封装:TO-262-3 标准包装:50 |
| 2SJ661-DL-1E | 制造商:ON Semiconductor 功能描述:PCH 4V DRIVE SERIES - Tape and Reel |
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