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参数资料
| 型号： | 2SJ666 |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | JFETs |
| 英文描述： | 36 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SMP, 3 PIN |
| 文件页数： | 4/4页 |
| 文件大小： | 38K |
| 代理商： | 2SJ666 |
2SJ666
No.8591-4/4
PS
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2005. Specifications and information herein are subject
to change without notice.
PD -- Ta
A S O
VGS -- Qg
PD -- Tc
Total Gate Charge, Qg -- nC
Gate-to-Source
V
oltage,
V
GS
--
V
Drain-to-Source Voltage, VDS -- V
Drain
Current,
I
D
--
A
Case Temperature, Tc --
°C
Allowable
Power
Dissipation,
P
D
--
W
Ambient Temperature, Ta --
°C
Allowable
Power
Dissipation,
P
D
--
W
IT08735
IT08809
0
20
40
60
80
100
120
1.65
140
160
2.0
1.5
1.0
0.5
--0.1
--1.0
--10
--100
2
3
5
7
2
3
5
7
2
3
5
7
23
5 7
23
5 7
23
5 7
--1.0
--0.1
--10
2
--100
IDP= --144A
ID= --36A
100
s
10
s
1ms
10ms
100ms
DC
operation
Operation in
this area is
limited by RDS(on).
IT08808
020
40
60
110
80
100
10
30
50
70
90
0
--2
--4
--6
--8
--9
--1
--3
--5
--7
--10
VDS= --50V
ID= --36A
IT08769
0
20
40
60
80
100
120
60
80
70
75
50
140
160
40
30
20
10
≤10
s
Tc=25
°C
Single pulse
Note on usage : Since the 2SJ666 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ666-TL | 36 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ666 | 36 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ668(2-7J1B) | 5 A, 60 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ669 | 5 A, 60 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ673 | 36 A, 60 V, 0.031 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ667 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:2SJ667 |
| 2SJ668 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon P-Channel MOS Type Relay Drive, DC/DC Converter and Motor Drive Applications |
| 2SJ668(Q) | 制造商:Toshiba 功能描述:Trans MOSFET P-CH 60V 5A 3-Pin (2+Tab) PW-Mold Cut Tape |
| 2SJ668(TE16L,NQ) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-Channel 60V 5A Logic PW-Mold |
| 2SJ668(TE16L1,NQ) | 功能描述:MOSFET MOSFET P-Ch 60V 5A Rdson=0.17Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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