- 您现在的位置：买卖IC网 > PDF目录33476 > 2SJ668(2-7J1B) 5 A, 60 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | 2SJ668(2-7J1B) |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 60 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-7J1B, SC-64, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 217K |
| 代理商： | 2SJ668(2-7J1B) |
2SJ668
2004-07-01
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (UMOSIII)
2SJ668
Relay Drive, DCDC Converter and Motor Drive
Applications
4-V gate drive
Low drainsource ON resistance: RDS (ON) = 0.12 (typ.)
High forward transfer admittance: |Yfs| = 5.0 S (typ.)
Low leakage current: IDSS = 100 A (max) (VDS = 60 V)
Enhancement mode: Vth = 0.8 to 2.0 V
(VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
60
V
Draingate voltage (RGS = 20 k)
VDGR
60
V
Gatesource voltage
VGSS
±20
V
DC
(Note 1)
ID
5
A
Drain current
Pulse(Note 1)
IDP
20
A
Drain power dissipation
PD
20
W
Single pulse avalanche energy
(Note 2)
EAS
40.5
mJ
Avalanche current
IAR
5
A
Repetitive avalenche energy (Note 3)
EAR
2
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
6.25
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
125
°C / W
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 2.2 mH,
RG = 25 , IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7J1B
Weight: 0.35 g (typ.)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ669 | 5 A, 60 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ673 | 36 A, 60 V, 0.031 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ680 | 2.5 A, 200 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ687 | 20 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SJ687-ZK-E2-AY | 20 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ669 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon P-Channel MOS Type Relay Drive, DC/DC Converter and Motor Drive Applications |
| 2SJ669_09 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Relay Drive, DC/DC Converter and Motor Drive |
| 2SJ670 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device |
| 2SJ670-TD-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 100V 1.5A SOT89 |
| 2SJ673-AZ | 功能描述:MOSFET P-CH -60V -36A TO-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
发布紧急采购，3分钟左右您将得到回复。