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参数资料
| 型号： | 2SK0663GP |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30 mA, 55 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封装： | ROHS COMPLIANT, SMINI3-F2, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 204K |
| 代理商： | 2SK0663GP |
Silicon Junction FETs (Small Signal)
1
Publication date: May 2008
SJF00056CED
2SK0663G
Silicon N-channel junction FET
For low-frequency amplification
For switching circuits
■ Features
Low noise figure NF
High gate-drain voltage (source open) VGDO
SMini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Drain-sourse voltage
VDS
55
V
Gate-drain voltage (Source open)
VGDO
55
V
Gate-source voltage (Drain open)
VGSO
55
V
Drain current
ID
30
mA
Gate current
IG
10
mA
Power dissipation
PD
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Gate-drain surrender voltage
VGDS
IG
= 100 A, VDS = 055
80
V
Drain-source current *
IDSS
VDS = 10 V, VGS = 0
1.0
12.0
mA
Gate-source cutoff current
IGSS
VGS = 30 V, VDS = 0
10
nA
Gate-source cutoff voltage
VGSC
VDS
= 10 V, ID = 10 A
5V
Forward transfer admittance
Yfs
VDS = 10 V, ID = 5 mA, f = 1 kHz
2.5
7.5
mS
Short-circuit forward transfer capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
6.5
pF
(Common source)
Reverse transfer capacitance
Crss
1.9
pF
(Common source)
Noise figure
NF
VDS = 10 V, VGS = 0, f = 100 Hz
2.5
dB
Rg
= 100 k
■ Electrical Characteristics Ta = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
P
Q
R
IDSS (mA)
1.0 to 3.0
2.0 to 6.5
5.0 to 12.0
Note) The part number in the parenthesis shows conventional part number.
■ Package
Code
SMini3-F2
Pin Name
1: Source
2: Drain
3: Gate
■ Marking Symbol: 2B
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK0663GRL | 功能描述:JFET N-CH 55V 30MA SMINI-3 RoHS:是 类别:分离式半导体产品 >> JFET（结点场效应 系列:- 标准包装:8,000 系列:- 电流 - 漏极(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏极至源极电压(Vdss):30V 漏极电流 (Id) - 最大:10mA FET 型:N 沟道 电压 - 击穿 (V(BR)GSS):- 电压 - 切断 (VGS 关）@ Id:180mV @ 1µA 输入电容 (Ciss) @ Vds:4pF @ 10V 电阻 - RDS（开）:200 欧姆 安装类型:表面贴装 包装:带卷 (TR) 封装/外壳:3-XFDFN 供应商设备封装:3-ECSP1006 功率 - 最大:100mW |
| 2SK0664 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:For Switching |
| 2SK0664(2SK664) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:小信号デバイス － 小信号FET － MOS FET |
| 2SK066400L | 功能描述:MOSFET N-CH 50V 100MA SMINI-3 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK0664G0L | 功能描述:MOSFET N-CH 50V 100MA SMINI-3 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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