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参数资料
| 型号： | 2SK1056-E |
| 元件分类： | JFETs |
| 英文描述： | 7 A, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-65, TO-3P, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 72K |
| 代理商： | 2SK1056-E |
2SK1056, 2SK1057, 2SK1058
Rev.2.00 Sep 07, 2005 page 2 of 5
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
2SK1056
120
2SK1057
140
Drain to source voltage
2SK1058
VDSX
160
V
Gate to source voltage
VGSS
±15
V
Drain current
ID
7
A
Body to drain diode reverse drain current
IDR
7
A
Channel dissipation
Pch*
1
100
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at TC = 25
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
2SK1056
120
2SK1057
140
Drain to source
breakdown voltage
2SK1058
V(BR)DSX
160
—
V
ID = 10 mA, VGS = –10 V
Gate to source breakdown voltage
V(BR)GSS
±15
—
V
IG =
±100 A, VDS = 0
Gate to source cutoff voltage
VGS(off)
0.15
—
1.45
V
ID = 100 mA, VDS = 10 V
Drain to source saturation voltage
VDS(sat)
—
12
V
ID = 7 A, VGD = 0 *
2
Forward transfer admittance
|yfs|
0.7
1.0
1.4
S
ID = 3 A, VDS = 10 V *
2
Input capacitance
Ciss
—
600
—
pF
Output capacitance
Coss
—
350
—
pF
Reverse transfer capacitance
Crss
—
10
—
pF
VGS = –5 V, VDS = 10 V,
f = 1 MHz
Turn-on time
ton
—
180
—
ns
Turn-off time
toff
—
60
—
ns
VDD = 20 V, ID = 4 A
Note:
2. Pulse test
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK1058-E | 7 A, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1058 | POWER, FET |
| 2SK1057 | POWER, FET |
| 2SK105E | 20 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2SK1070PIDTL-E | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1057 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1057-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 140V 7A 3-Pin(3+Tab) TO-3P Tube Tray 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,140V,7A,TO-3P 制造商:Renesas 功能描述:Trans MOSFET N-CH 140V 7A 3-Pin(3+Tab) TO-3P Tube |
| 2SK1058 | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 160V 7A 3-Pin(3+Tab) TO-3P Tube |
| 2SK1058-E | 功能描述:MOSFET N-CH 160V 7A TO-3P RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK1059 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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