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参数资料
| 型号： | 2SK1056-E |
| 元件分类： | JFETs |
| 英文描述： | 7 A, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-65, TO-3P, 3 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 72K |
| 代理商： | 2SK1056-E |
2SK1056, 2SK1057, 2SK1058
Rev.2.00 Sep 07, 2005 page 3 of 5
Main Characteristics
50
100
0
Case Temperature TC (°C)
150
50
Channel
Dissipation
Pch
(W)
Power vs. Temperature Derating
100
150
Maximum Safe Operation Area
Drain
Current
I
D
(A)
10
20
50
1.0
2
5
100
10
20
Drain to Source Voltage VDS (V)
5
500
0.5
200
0.2
ID max (Continuous)
Ta = 25
°C
PW
=
10
m
s
1
s
hot
PW
=
100
ms
1
shot
PW
=
1 s
1
shot
DC
Operat
ion
(T
C =
25
°C)
2SK1056
2SK1057
2SK1058
Typical Output Characteristics
30
Drain to Source Voltage VDS (V)
40
20
10
50
Drain
Current
I
D
(A)
0
2
4
6
8
0
10
VGS = 10 V
TC = 25°C
1
2
0
5
6
7
8
9
Pch = 100
W
3
4
Typical Transfer Characteristics
1.2
Gate to Source Voltage VGS (V)
1.6
0.8
0.4
0
2.0
0.2
0.4
0.6
0.8
1.0
0
Drain
Current
I
D
(A)
T C
=
–25
°C
75
VDS = 10 V
25
Drain to Source Saturation
Voltage vs. Drain Current
1.0
Drain Current ID (A)
2
0.5
0.2
5
1.0
2
5
10
0.1
0.5
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
0.2
0.1
10
T C
=
–25
°C
25°
C
75°
C
VGD = 0
Drain to Source Voltage vs.
Gate to Source Voltage
6
Gate to Source Voltage VGS (V)
8
4
2
010
4
6
8
10
0
2
Drain
to
Source
Voltage
V
DS
(V)
ID = 1 A
5 A
TC = 25°C
2 A
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK1058-E | 7 A, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1058 | POWER, FET |
| 2SK1057 | POWER, FET |
| 2SK105E | 20 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2SK1070PIDTL-E | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1057 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1057-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 140V 7A 3-Pin(3+Tab) TO-3P Tube Tray 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,140V,7A,TO-3P 制造商:Renesas 功能描述:Trans MOSFET N-CH 140V 7A 3-Pin(3+Tab) TO-3P Tube |
| 2SK1058 | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 160V 7A 3-Pin(3+Tab) TO-3P Tube |
| 2SK1058-E | 功能描述:MOSFET N-CH 160V 7A TO-3P RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK1059 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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