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参数资料
| 型号： | 2SK1152(L) |
| 元件分类： | JFETs |
| 英文描述： | 6 ohm, POWER, FET |
| 封装： | DPAK-3 |
| 文件页数： | 7/11页 |
| 文件大小： | 57K |
| 代理商： | 2SK1152(L) |
2SK1151(L)(S), 2SK1152(L)(S)
5
20
16
12
8
4
0
4
8
12
16
20
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
1 A
ID = 0.5 A
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Pulse Test
2 A
100
50
20
10
1
0.1
0.2
0.5
1.0
5
Drain Current ID (A)
0.05
Static Drain to Source on State
Resistance vs. Drain Current
Pulse Test
15 V
VGS = 10 V
2
5
2
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
10
8
6
4
2
0
40
80
120
160
Case Temperature TC (°C)
–40
Static Drain to Source on State
Resistance vs. Temperature
VGS = 10 V
Pulse Test
Static
Drain-Source
on
State
Resistance
R
DS
(on)
(
)
ID = 2 A
0.5 A
1 A
Forward Transfer Admittance
vs. Drain Current
5
2
1.0
0.5
0.05
0.1
0.2
1.0
2
5
Drain Current ID (A)
0.1
0.2
0.5
VDS = 20 V
Pulse Test
75°C
–25°C
Forward
Transfer
Admittance
yfs
(S)
TC = 25°C
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK1151(L) | 5.5 ohm, POWER, FET |
| 2SK1152STL-E | 1.5 A, 500 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1155-E | 5 A, 450 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1156-E | 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1155-E | 5 A, 450 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1152-L(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1152L-E | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 500V 1.5A 3PIN DPAK(L)-(1) - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 500V 1.5A 3-Pin(3+Tab) DPAK(L)-(1) Box 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,500V,1.5A,3.5ohm,DPAK-L |
| 2SK1152S | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:Silicon N-Channel MOSFET |
| 2SK1152STL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1153 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
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