参数资料
型号: 2SK1154-E
元件分类: JFETs
英文描述: 3 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: SC-46, 3 PIN
文件页数: 5/8页
文件大小: 96K
代理商: 2SK1154-E
2SK1153, 2SK1154
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
Power vs. Temperature Derating
60
40
20
0
Channel
Dissipation
Pch
(W)
50
100
150
Case Temperature TC (°C)
Maximum Safe Operation Area
50
1
10
1,000
Drain to Source Voltage VDS (V)
20
0.5
0.01
100
Drain
Current
I
D
(A)
0.05
0.1
10
3
30
300
5
2
0.2
1 m
s
Ta = 25
°C
DC
Operation
(T
C =
25
°C)
PW
=
10
ms
(1
shot)
2SK1154
2SK1153
Operation
in
this
area
is
limited
by
R
DS
(on)
10
s
100
s
Typical Output Characteristics
5
4
3
2
0
4
8
12
16
20
Pulse Test
1
Drain
Current
I
D
(A)
VGS = 4 V
6 V
Drain to Source Voltage VDS (V)
4.5 V
10 V
5.5 V
8 V
5 V
Typical Transfer Characteristics
4
3
2
1
0
24
6
8
10
Gate to Source Voltage VGS (V)
5
Drain
Current
I
D
(A)
VDS = 10 V
Pulse Test
–25
°C
TC = 25°C
75
°C
20
16
12
8
4
0
4
8
12
16
20
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
2 A
ID = 1 A
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Pulse Test
3 A
50
20
10
5
0.5
0.2
0.5
1.0
2
10
Drain Current ID (A)
0.1
Static Drain to Source on State
Resistance vs. Drain Current
Pulse Test
15 V
VGS = 10 V
5
2
1.0
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
相关PDF资料
PDF描述
2SK1157-E 7 A, 450 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK1158-E 7 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK1157 0.8 ohm, POWER, FET, TO-220AB
2SK1158 7 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK1158 7 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
相关代理商/技术参数
参数描述
2SK1155 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET
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