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参数资料
| 型号： | 2SK1154-E |
| 元件分类： | JFETs |
| 英文描述： | 3 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | SC-46, 3 PIN |
| 文件页数： | 7/8页 |
| 文件大小： | 96K |
| 代理商： | 2SK1154-E |
2SK1153, 2SK1154
Rev.2.00 Sep 07, 2005 page 5 of 6
Reverse Drain Current vs.
Source to Drain Voltage
5
4
3
2
1
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Reverse
Drain
Current
I
DR
(A)
Pulse Test
5 V, 10 V
VGS = 0, –10 V
3
1.0
0.1
0.03
0.01
0.3
10
100
1 m
10 m
100 m
1
10
Pulse Width PW (S)
θch–c(t) = γ
S (t) θch–c
θch–c = 4.17°C/W, T
C = 25°C
PDM
PW
T
D =
T
PW
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized
Transient
Thermal
Impedance
γ S
(t)
TC = 25°C
0.05
0.02
0.2
0.1
0.5
D = 1
1 Shot
Pulse
0.01
Vin Monitor
Vout Monitor
RL
50
Vin = 10 V
D.U.T
.
VDD = 30 V
.
Switching Time Test Circuit
Vin
10 %
90 %
10 %
td (on)
td (off)
tr
tf
Vout
10 %
Waveforms
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK1157-E | 7 A, 450 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1158-E | 7 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1157 | 0.8 ohm, POWER, FET, TO-220AB |
| 2SK1158 | 7 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1158 | 7 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1155 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1155(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1155-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1156 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
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