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参数资料
| 型号： | 2SK1307 |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220FM, 3 PIN |
| 文件页数： | 5/8页 |
| 文件大小： | 49K |
| 代理商： | 2SK1307 |
2SK1307
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
100
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
——V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
—
250
AV
DS = 80 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—
0.065
0.085
I
D = 10 A, VGS = 10 V *
1
—
0.085
0.12
I
D = 10 A, VGS = 4 V *
1
Forward transfer admittance
|yfs|
10
16
—
S
I
D = 10 A, VDS = 10 V *
1
Input capacitance
Ciss
—
1300
—
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
—
540
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
160
—
pF
Turn-on delay time
t
d(on)
—
12
—
ns
I
D = 10 A, VGS = 10 V,
Rise time
t
r
—
100
—
ns
R
L = 3
Turn-off delay time
t
d(off)
—
300
—
ns
Fall time
t
f
—
150
—
ns
Body to drain diode forward
voltage
V
DF
—
1.3
—
V
I
F = 20 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
300
—
ns
I
F = 20 A, VGS = 0,
di
F/dt = 50 A/s
Note:
1. Pulse test
See characteristic curves of 2SK1302.
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PDF描述 |
|---|---|
| 2SK1378 | 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1399 | 100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK1402-E | 4 A, 600 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1435 | 30 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PML |
| 2SK1468TP-FA | 4000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1307-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1308 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 5A I(D) | TO-221VAR |
| 2SK1308A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 5A I(D) | TO-221VAR |
| 2SK1310 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:N CHANNEL MOS TYPE (RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER) |
| 2SK1310A | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER |
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