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参数资料
| 型号： | 2SK1401-E |
| 元件分类： | JFETs |
| 英文描述： | 15 A, 300 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-65, TO-3P, 3 PIN |
| 文件页数： | 7/9页 |
| 文件大小： | 198K |
| 代理商： | 2SK1401-E |
2SK1401, 2SK1401A
Rev.2.00 Sep 07, 2005 page 5 of 6
20
0.8
2.0
Source to Drain Voltage VSD (V)
Reverse
Drain
Current
I
DR
(A)
16
0.4
1.2
1.6
8
12
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
0
4
5 V
VGS = 0, –5 V
10 V
D = 1
TC = 25°C
0.5
0.2
0.1
0.05
0.02
0.01
1 Shot
Pulse
T
PW
PDM
D =
T
PW
θch–c (t) = γ
S (t) θch–c
θch–c = 1.25°C/W, T
C = 25°C
3
Pulse Width PW (S)
Normalized
Transient
Thermal
Impedance
γ S
(t)
1.0
0.1
0.3
10
0.03
0.01
100
10 m
100 m
1
10
1 m
Normalized Transient Thermal Impedance vs. Pulse Width
Switching Time Test Circuit
Vin Monitor
Vin
10 V
50
D.U.T
Vout Monitor
RL
Waveforms
Vin
Vout
td (on)
10%
t r
t
f
10%
90%
10%
90%
td (off)
VDD
= 30 V
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PDF描述 |
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| 2SK1403A-E | 8 A, 650 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1406 | 20 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1414 | 6 A, 1500 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PBL |
| 2SK1416 | 15 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1418-CB | 40 A, 60 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1402 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1402A | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1402A(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1402A-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
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