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参数资料
| 型号： | 2SK1403 |
| 元件分类： | JFETs |
| 英文描述： | 8 A, 600 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-3P, 3 PIN |
| 文件页数： | 7/11页 |
| 文件大小： | 64K |
| 代理商： | 2SK1403 |
2SK1403, 2SK1403A
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source
K1403
V
(BR)DSS
600
—
V
I
D = 10 mA, VGS = 0
breakdown voltage
K1403A
650
—
Gate to source breakdown
voltage
V
(BR)GSS
±30
——V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±25 V, VDS = 0
Zero gate voltage
K1403
I
DSS
—
250
AV
DS = 500 V, VGS = 0
drain current
K1403A
V
DS = 550 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source K1403
R
DS(on)
—
0.9
1.3
I
D = 4 A, VGS = 10 V *
1
on state resistance
K1403A
—
1.0
1.4
Forward transfer admittance
|yfs|
4.0
6.5
—
S
I
D = 4 A, VDS = 10 V *
1
Input capacitance
Ciss
—
1180
—
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
—
265
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
50
—
pF
Turn-on delay time
t
d(on)
—
15
—
ns
I
D = 4 A, VGS = 10 V,
Rise time
t
r
—
50
—
ns
R
L = 7.5
Turn-off delay time
t
d(off)
—
105
—
ns
Fall time
t
f
—45
—
ns
Body to drain diode forward
voltage
V
DF
—
0.95
—
V
I
F = 8 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
420
—
ns
I
F = 8 A, VGS = 0,
di
F/dt = 100 A/s
Note:
1. Pulse test
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PDF描述 |
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| 2SK1444LS | 3 A, 450 V, 2.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220FI |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1403A | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1403A-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1404 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 600V 5A 3PIN TO-220FM - Rail/Tube 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK1404(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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