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参数资料
| 型号： | 2SK1519 |
| 元件分类： | JFETs |
| 英文描述： | 30 A, 450 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-3PL, 3 PIN |
| 文件页数： | 7/11页 |
| 文件大小： | 65K |
| 代理商： | 2SK1519 |
2SK1519, 2SK1520
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source
2SK1519 V
(BR)DSS
450
—
V
I
D = 10 mA, VGS = 0
breakdown voltage
2SK1520
500
Gate to source breakdown
voltage
V
(BR)GSS
±30
——V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±25 V, VDS = 0
Zero gate voltage
2SK1519 I
DSS
—
250
AV
DS = 360 V, VGS = 0
drain current
2SK1520
V
DS = 400 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
I
D = 1 mA, VDS = 10 V
Static Drain to source 2SK1519 R
DS(on)
—
0.11
0.15
I
D = 15 A, VGS = 10 V *
1
on state resistance
2SK1520
—
0.12
0.16
Forward transfer admittance
|yfs|
15
25
—
S
I
D = 15 A, VDS = 10 V *
1
Input capacitance
Ciss
—
5800
—
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
—
1550
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
170
—
pF
Turn-on delay time
t
d(on)
—
65
—
ns
I
D = 15 A, VGS = 10 V,
Rise time
t
r
—
170
—
ns
R
L = 2
Turn-off delay time
t
d(off)
—
415
—
ns
Fall time
t
f
—
200
—
ns
Body to drain diode forward
voltage
V
DF
—
1.1
—
V
I
F = 30 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
120
—
ns
I
F = 30 A, VGS = 0,
di
F/dt = 100 A/s
Note:
1. Pulse test
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK1519 | 30 A, 450 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1522 | 50 A, 500 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1530 | 12 A, 200 V, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1530-Y | 12 A, 200 V, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1532-D | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1519-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK152 | 制造商:SONY 制造商全称:Sony Corporation 功能描述:2SK152 |
| 2SK1520 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1520(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
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