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参数资料
| 型号： | 2SK1520 |
| 元件分类： | JFETs |
| 英文描述： | 30 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-3PL, 3 PIN |
| 文件页数： | 10/11页 |
| 文件大小： | 65K |
| 代理商： | 2SK1520 |
2SK1519, 2SK1520
6
500
10
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
200
20
1
50
100
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/
s, V
GS = 0
Pulse Test
10
0.5
2
20
50
5
1,000
10,000
20
50
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
100
10
30
40
Typical Capacitance vs.
Drain to Source Voltage
0
10
Crss
Coss
Ciss
VGS = 0
f = 1 MHz
1,000
160
400
Gate Charge Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
800
80
240
0
320
600
400
200
ID = 30 A
Pulse Test
VDD = 400 V
Dynamic Input Characteristics
250 V
VGS
20
Gate
to
Source
Voltage
V
GS
(V)
16
12
8
4
0
VDS
100 V
VDD = 100 V
250 V
400 V
1,000
250
Drain Current ID (A)
Switching
Time
t
(ns)
500
50
15
20
10
100
200
0.5
20
10
Switching Characteristics
tf
td (off)
tr
VGS = 10 V, PW = 2 s
duty < 1%, VDD 30 V
=
.
td (on)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK1519 | 30 A, 450 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1519 | 30 A, 450 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1522 | 50 A, 500 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1530 | 12 A, 200 V, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1530-Y | 12 A, 200 V, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1520(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK1520-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1521 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 450V 50A 3PIN TO-3PL - Rail/Tube |
| 2SK1521(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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