参数资料
型号: 2SK1530
元件分类: JFETs
英文描述: 12 A, 200 V, N-CHANNEL, Si, POWER, MOSFET
封装: 2-21F1B, 3 PIN
文件页数: 4/4页
文件大小: 236K
代理商: 2SK1530
Data Sheet D11706EJ2V0DS00
4
2SK2858
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1
0.1
0.01
0.001
0.0001
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
0
2
8
4
6
10
VGS = 10 V
TA = 125C
75C
25C
0
10
20
30
48
12
16
20
R
DS
(on)
-Drain
to
Source
On-state
Resistance
-
VGS - Gate to Source Voltage - V
ID = 1 mA
10 mA
100 mA
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1
10
0.01
0.1
100
10
100
1
0.1
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
VDS - Drain to Source Voltage - V
Ciss
Coss
Crss
f = 1 MHz
VGS = 0 V
0.1
1
10
ID - Drain Current - A
td
(on)
,tr,
td
(off)
,tf
-
Swwitchig
Time
-
ns
1000
SWITCHING CHARACTERISTICS
VDD = 3 V
VGS(on) = 4V
RG = 10
100
10
td(off)
td(on)
tf
tr
0.0001
0.001
0.01
1
0.1
0.6
0.4
0.8
1.0
1.2
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
IF
-
S
o
u
rc
e
to
D
ra
in
C
u
rr
e
n
t
-
A
VF(S-D) - Source to Drain Voltage - V
5
相关PDF资料
PDF描述
2SK1530-Y 12 A, 200 V, N-CHANNEL, Si, POWER, MOSFET
2SK1532-D 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
2SK1532-B 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
2SK1532 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
2SK1536 3 A, 900 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
2SK1530_06 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATION)
2SK1530_09 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:High-Power Amplifier Application
2SK1530O 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 12A I(D) | TO-247VAR
2SK1530Y 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 12A I(D) | TO-247VAR
2SK1530-Y 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:High-Power Amplifier Application