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参数资料
| 型号： | 2SK1971-E |
| 元件分类： | JFETs |
| 英文描述： | 35 A, 500 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-3PL, 3 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 104K |
| 代理商： | 2SK1971-E |
2SK1971
REJ03G0990-0300 Rev.3.00 May 13, 2009
Page 2 of 6
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown voltage
V(BR)DSS
500
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±25 V, VDS = 0
Zero gate voltage drain current
IDSS
—
250
A
VDS =400 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
2.0
—
3.0
V
ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance
RDS(on)
—
0.19
0.23
ID = 18 A, VGS = 10 V*
3
Forward transfer admittance
|yfs|
16
24
—
S
ID = 18 A, VDS = 10 V*
3
Input capacitance
Ciss
—
4320
—
pF
Output capacitance
Coss
—
1120
—
pF
Reverse transfer capacitance
Crss
—
130
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
—
50
—
ns
Rise time
tr
—
170
—
ns
Turn-off delay time
td(off)
—
320
—
ns
Fall time
tf
—
130
—
ns
ID = 18 A, VGS = 10 V,
RL = 1.67
Body to drain diode forward voltage
VDF
—
1.1
—
V
IF =35 A, VGS = 0
Body to drain diode reverse
recovery time
trr
—
530
—
ns
IF = 35 A, VGS = 0,
diF/dt = 100 A/
s
Note:
3. Pulse Test
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK1971-E | 35 A, 500 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1971 | 35 A, 500 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1985-01MR | 5 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F15 |
| 2SK1942-01 | 3 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P |
| 2SK2250-01S | 2 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET |
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