参数资料
型号: 2SK1971-E
元件分类: JFETs
英文描述: 35 A, 500 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: TO-3PL, 3 PIN
文件页数: 4/7页
文件大小: 104K
代理商: 2SK1971-E
2SK1971
REJ03G0990-0300 Rev.3.00 May 13, 2009
Page 4 of 6
Case Temperature TC (°C)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State
Resistance vs. Temperature
Drain Current ID (A)
Forward
Transfer
Admittance
y
fs
(S)
Forward Transfer Admittance
vs. Drain Current
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
Body to Drain Diode Reverse
Recovery Time
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nC)
Drain
to
Source
Voltage
V
DS
(V)
Dynamic Input Characteristics
Gate
to
Source
Voltage
V
GS
(V)
Drain Current ID (A)
Switching
Time
t
(ns)
Switching Characteristics
–40
1.0
0.8
0.6
0.4
0.2
0
40
80
120
Pulse Test
160
I = 50 A
V
= 10 V
GS
D
20 A
10 A
0
50
20
10
5
2
1
0.5
1
2
5
10
50
100
20
Tc = 25
°C
–25
°C
75
°C
V
= 20 V
Pulse Test
DS
0.5
1
2
5
10
20
50
10
20
50
100
200
500
1000
di/dt = 100 A/ s, V
= 0
Ta = 25
°C
GS
10000
1000
100
10
010
20
30
40
50
V
= 0
f = 1 MHz
GS
Ciss
Coss
Crss
1000
800
600
400
200
40
80
120
160
200
20
16
12
8
4
0
V
= 400 V
250 V
100 V
DD
V
I = 35 A
DS
D
VGS
0
V
= 400 V
250 V
100 V
DD
0.5
1
2
5
10
20
50
10
20
50
100
200
500
1000
t
td(on)
t
td(off)
r
f
VGS = 10 V, VDD = 30 V
PW = 5
s, duty ≤ 1 %
相关PDF资料
PDF描述
2SK1971-E 35 A, 500 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK1971 35 A, 500 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK1985-01MR 5 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F15
2SK1942-01 3 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
2SK2250-01S 2 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET
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