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参数资料
| 型号： | 2SK2007-E |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 250 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-65, TO-3P, 3 PIN |
| 文件页数： | 5/9页 |
| 文件大小： | 96K |
| 代理商： | 2SK2007-E |
2SK2007
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Drain
Current
I
D
(A)
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain Current ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State
Resistance vs. Drain Current
Case Temperature TC (°C)
Channel
Dissipation
Pch
(W)
Power vs. Temperature Derating
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
150
100
50
100
150
0
1 ms
PW
=
10
ms
(1
shot)
100
s
10
s
Operation in this
area is limited
by RDS(on)
100
30
10
3
1
0.3
0.1
1
3
10
30
100
300
1000
Ta = 25
°C
DC
Operation
(Tc
=
25
°C)
50
40
30
20
10
VGS = 4 V
10 V
8 V
6 V
5.5 V
4
8
12
16
20
Pulse Test
0
5 V
Tc = 25
°C
50
40
30
20
10
2
46
810
–25
°C
75
°C
0
VDS = 10 V
Pulse Test
0
4
812
16
20
5
4
3
2
1
ID = 5 A
10 A
20 A
VGS = 10 V
15 V
2
5
10
20
50
100
2
1
0.5
0.2
0.1
0.05
5
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2008 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK2008-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2009 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS) |
| 2SK2009(F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 30V 0.2A 3-Pin S-Mini Bulk |
| 2SK2009(TE85L) | 制造商:Toshiba America Electronic Components 功能描述:200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
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