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参数资料
| 型号： | 2SK2007-E |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 250 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-65, TO-3P, 3 PIN |
| 文件页数： | 6/9页 |
| 文件大小： | 96K |
| 代理商： | 2SK2007-E |
2SK2007
Rev.2.00 Sep 07, 2005 page 4 of 6
Case Temperature TC (°C)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State
Resistance vs. Temperature
Drain Current ID (A)
Forward
Transfer
Admittance
y
fs
(S)
Forward Transfer Admittance
vs. Drain Current
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
Body to Drain Diode Reverse
Recovery Time
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
Dynamic Input Characteristics
Gate
to
Source
Voltage
V
GS
(V)
Drain Current ID (A)
Switching
Time
t
(ns)
Switching Characteristics
0.5
0.4
0.3
0.2
0.1
0
I = 20 A
D
–40
0
80
120
40
5 A
10 A
160
VGS = 10 V
Pulse Test
Tc = 25
°C
–25
°C
100
30
10
3
1
0.3
0.1
75
°C
VDS = 10 V
Pulse Test
0.1
0.3
1
3
10
30
100
di/dt = 100 A/ s
VGS = 0, Ta = 25°C
500
0.5
1
2
5
10
20
50
200
100
50
20
10
5
10000
1000
100
1
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
010
20
30
40
50
500
400
300
200
100
0
20
16
12
8
4
0
ID = 20 A
VDD = 50 V
100 V
200 V
0
20
40
60
80
100
VDD = 200 V
100 V
50 V
tf
tr
td(off)
500
200
100
50
20
10
5
0.5
1
2
5
10
20
50
VGS = 10 V, VDD 30 V
PW = 5 s, duty
1%
=
:
<
=
td(on)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2008 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
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| 2SK2009 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS) |
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| 2SK2009(TE85L) | 制造商:Toshiba America Electronic Components 功能描述:200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
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