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参数资料
| 型号： | 2SK2008 |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 250 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-3PFM, 3 PIN |
| 文件页数： | 6/9页 |
| 文件大小： | 50K |
| 代理商： | 2SK2008 |
2SK2008
4
0
30
60
90
Channel
Dissipation
Pch
(W)
50
100
150
Case Temperature Tc (°C)
Power vs. Temperature Derating
Maximum Safe Operation Area
0.1
0.3
1
3
10
30
100
Drain
Current
I
(A)
D
1
3
10
30
100 300
1000
Drain to Source Voltage V
(V)
DS
Ta = 25°C
DC
Operation(Tc
=
25°C)
PW
=
10
ms
(1
Shot)
1 ms
10
s
100
s
Operation in this
area is limited
by RDS(on)
3
Pulse Width PW (s)
Normalized
Transient
Thermal
Impedance
γ S
(t)
1.0
0.1
0.3
D = 1
10
0.03
0.01
100
10 m
100 m
1
10
1 m
TC = 25°C
0.5
0.2
0.1
0.05
0.02
0.01
1 Shot
Pulse
Normalized Transient Thermal Impedance vs. Pulse Width
T
PW
PDM
D =
T
PW
θch–c (t) = γ
S (t) θch–c
θch–c = 2.08°C/W, T
C = 25°C
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2009TE85R | 200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 2SK2010 | 4 A, 250 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220ML |
| 2SK2011 | 12 A, 250 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220ML |
| 2SK2014 | 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK2015 | 3000 mA, 150 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2008-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2009 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS) |
| 2SK2009(F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 30V 0.2A 3-Pin S-Mini Bulk |
| 2SK2009(TE85L) | 制造商:Toshiba America Electronic Components 功能描述:200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 2SK2009(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:Transistor,MOSFET |
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