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参数资料
| 型号： | 2SK2012 |
| 元件分类： | JFETs |
| 英文描述： | 18 A, 250 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220ML |
| 封装： | TO-220ML, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 40K |
| 代理商： | 2SK2012 |
2SK2012
No.4321–3/4
PD -- Ta
ITR02361
ITR02362
SW Time -- ID
ITR02359
A S O
PD -- Tc
ITR02360
23
5
7 1.0
23
5
7
10
23
5
7
10
100
5
3
2
7
5
3
2
7
100
1.0
23
5
7
10
23
5
7
2
100
5
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
2.4
2.0
1.6
1.2
0.8
0.4
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
0
50
40
30
20
10
3
tf
td(of
f)
t r
td(on)
VDD=100V
VGS=10V
P.W.=10
s
D.C.=1%
ID=18A
10
s
100
s
1ms
10ms
100ms
DC
operation
Operation in this
area is limited by RDS(on).
yfs -- ID
ITR02357
Ciss, Coss, Crss -- VDS
ITR02358
1.0
10
2
3
5
2
3
5
7
0.1
1.0
10
100
23
5
7
23
5
7
2
3
57
5
7
04
8
12
16
24
28
32
20
100
2
7
5
3
7
2
5
3
2
1000
7
5
3
2
10000
25°
C
Tc=
--
25
°C
75°
C
VDS=10V
f=1MHz
Ciss
Coss
Crss
IDP=72A
Drain-to-Source Voltage, VDS –V
Drain Current, ID –A
Drain
Current,
I
D
–A
Drain Current, ID –A
Switching
Time,
SW
Time
–
n
s
Forward
Transfer
Admitance,|
y
fs
|–S
Case Temperature, Tc –
°C
Allowable
Power
Dissipation,
P
D
–W
Ambient Temperature, Ta –
°C
Allowable
Power
Dissipation,
P
D
–W
Tc=25
°C
Single pulse
No
heat
sink
Ciss,
Coss,
Crss
–
p
F
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相关代理商/技术参数 |
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| 2SK2013 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:N CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION) |
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| 2SK2013Y | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 180V V(BR)DSS | 1A I(D) | SC-67 |
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